Low Noise Amplifier Design and Fabrication

For the final project in mirowave devices (EENG 529) I worked in a group to design a full-duplex RF frontend, my component was the low noise amplifier. The LNA was designed around the Infineon BFP650 bipolar transistor using a common emitter topology with a single voltage bias and a resistive current divider generating appopriate base current and collector emitter voltage for desired class A operation. The simulation was performed in Keysight ADS and the amplifier was fabricated on a 60 mil 1oz copper Rogers RO3003C substrate. The amplifier was tested using a vector network analyzer and the measured gain and linearity figure were in good agreement with simulation.